Igumbor E.; Dongho-Nguimdo M.; Mapasha E.; Kalimuthu R.; Raji A.; Meyer W., Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‑Based Device Performance, Journal of Electronic Materials 53 (4), pp. 1903.
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Igumbor E.; Dongho-Nguimdo M.; Mapasha E.; Kalimuthu R.; Raji A.; Meyer W., Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‑Based Device Performance, Journal of Electronic Materials 53 (4), pp. 1903.
